t qna. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SC2275 description ? collector-emitter breakdown voltage : v(br)ceo=120v(min) ? good linearity of hfe ? complement to type 2sa985 applications ? audio frequency power amplifier applications ? high frequency power amplifier applications absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous total power dissipation @ ta=25"c total power dissipation @ tc=25"c junction temperature storage temperature range value 120 120 5 1.5 3.0 0.3 1.5 25 150 -55-150 unit v v v a a a w 'c "c ? - '^ pin j. \ 1.base 2. collector 3. emitter to-220c package mo! u 4 a' * k t t . cl i ?* b m j -v ?)l-f ^-cry -'? .1 1 h c r ?iu d u . dim a b c d f g h .1 k l q r s u u - mm min 15,50 9.90 4.20 0.70 3.40 4.98 2,63 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 wax 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.50 13.40 1.45 2.90 2.70 1.35 6.65 8.86 r ? i nj semi-cuncliictors reserves the right to chmige test conditions, parameter limits and package dimensions \\ithiuit notiee. infbnnation furnished by n.i seini-conductors is believed to he both accurate and reliable at the time ofgoins: to press.. ilimever. n.i semi-conductors assumes no responsibility lbran> errors or omission:, discovered in its use." n.i semi-c'(inductors eneourasies customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2SC2275 electrical characteristics tc=25c unless otherwise specified symbol vce(sat) vbe(sat) icbo iebo hfe-1 hpe-2 cob fi parameter collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain ? bandwidth product conditions lc= 1a; ib=0.1a lc=1a; ib=0.1a vcb= 120v; ie= 0 veb= 3v; lc= 0 lc= 5ma ; vce= 5v lc= 0.3a ; vce= 5v le=0;vcb=10v;f,ebt=1mhz lc= 0.2a; vce= 5v min 35 60 typ. 19 200 max 2.0 1.5 1.0 1.0 320 unit v v ua u a pf mhz ? hfe classifications r 60-120 q 100-200 p 160-320
|
